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Studies of Bi4−xGdxTi3O12 Bifunctional Material

Published online by Cambridge University Press:  01 February 2011

Maharaj S. Tomar ,
Ricardo E. Melgarejo ,
Rahúl Singhal ,
Luis M. Angelats  and
Ram S. Katiyar
Maharaj S. Tomar
Affiliation:
mtomar@uprm.edu, University of Puerto Rico, Physics, Post Street, Mayaguez, PR, 00681-9016, Puerto Rico, (787) 832-4040, ext.2011, 787-832-3512
Ricardo E. Melgarejo
Affiliation:
mtomar@uprm.edu
Rahúl Singhal
Affiliation:
mtomar@uprm.edu
Luis M. Angelats
Affiliation:
mtomar@uprm.edu
Ram S. Katiyar
Affiliation:
mtomar@uprm.edu
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Abstract

Gadolinium-substituted Bi4Ti3O12 (i.e. Bi4−xGdxTi3O12) were synthesized by sol-gel process for different compositions, and thin films were deposited on Pt (Pt/TiO2/SiO2/Si) substrate by spin coating. Post annealed films at 700° C were investigated for their structural properties using x-ray diffraction and Raman spectroscopy indicating solid solution for compositions: x = 0.00, 0.46, 0.56, and 0.85 where Bi ion is replaced by Gd-ion. Sol-gel derived Pt/Bi4−xGdxTi3O12 film/Pt capacitor structure was tested for dielectric, ferroelectric, and leakage current responses. Films showed ferroelectricity with polarization, Pr = 22 µC/cm2 for composition: x = 0.46. Magnetic response of the powder sample for composition: x = 0.85 was tested using SQUID, which showed superparamagnetic at room temperature and magnetic at 5 K with magnetic coercivity (Hc) = 29 Oe and very small remanance (σr) = 5.4 × 10−4 emu/g.

Keywords

ferroelectricitymagnetic propertiesdielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 888: Symposium V – Materials and Devices for Smart Systems II , 2005 , 0888-V08-09
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Aurivillus, B., Ark Kemi 1 463 (1949).Google Scholar
2. Subbarao, E. C., J. Phys, Chem. Solids 23, 665 (1962).Google Scholar
3. Armstrong, R. A. and Newnham, R. E., Mater. Res. Bull. 7, 1025 (1972).Google Scholar
4. Damjancovic, D., Rep. Prog. Phys. 61, 1267 (1998).Google Scholar
5. Withers, R. L., Thompson, J. G., and Rae, A. D., J. Solid State Chem. 94, 404 (1991).Google Scholar
6. Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Lee, J., and Jo, W., Nature (London) 401, 682 (1999).Google Scholar
7. Tomar, M.S., Melgarejo, R. E., Hidalgo, A., Mazumder, S. B., and Katiyar, R. S., Appl. Phys. Lett. 81, 341 (2003)Google Scholar
8. Graves, P. R., Hua, G., Myhra, S., and Thompson, J. G., J. Solid State Chem. 144, 112 (1995).Google Scholar
9. Kojima, S., Imaizumi, R., Hamazaki, S., and Takaahige, M., Jpn. J. Appl. Phys., Part 1 33, 5559 (1994).Google Scholar
10. Osada, M., Tada, M., Kakihama, M., Watanabe, T., and Funakubo, H., Jpn. J. Appl. Phys. Part 1, 40, 5572 (2001).Google Scholar
11. Melgarejo, R. E., Tomar, M. S., Dobal, P. S., and Katiyar, R. S., J. Mater. Res. 15, 1661 (2000).Google Scholar
12. Kojima, S. and Shimada, S., Physica B 219, 617 (1996).Google Scholar