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Studies of Interface Mixing in a Symmetrically Strained Ge/Si Superlattice

Published online by Cambridge University Press:  25 February 2011

R. C. Bowman ,
P. M. Adams ,
S. J. Chang ,
V. Arbet  and
K. L. Wang
R. C. Bowman
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
P. M. Adams
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
S. J. Chang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
V. Arbet
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
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Abstract

Raman scattering and x ray diffraction were used to study the effects of annealing on a Ge/Si superlattice that had been grown upon a Ge0.4Si0.6 alloy buffer layer which distributes the strain between the layers. Anneals above 910K caused substantial mixing at the Ge-Si interfaces. The interdiffusion coefficients obtained from the x-ray data were found to obey an Arrhenius relation with an activation energy of 3.1±0.2eV. Initial intermixing seems to be dominated by the diffusion of Si atoms into the Ge layers via a vacancy mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 347
Copyright
Copyright © Materials Research Society 1989

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