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Studies of the Etching of Si, SiO2 and Mo by Carbon Fluorine Compounds Using Real Time Auger Spectroscopy
Published online by Cambridge University Press: 21 February 2011
Abstract
The ion etching of Si, SiO2 and Mo by fluorocarbon ions was studied using real time Auger electron spectroscopy. The carbon in the CF3+ ions was found to react rapidly with SiO2 to form volatile products, resulting in a very low carbon concentration on the SiO2 surface. Both Si and Mo formed carbides when bombarded with CF3+ ions. This resulted in a high carbon concentration on these surfaces.
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- Copyright © Materials Research Society 1985
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