Hostname: page-component-84b7d79bbc-2l2gl Total loading time: 0 Render date: 2024-07-25T20:29:25.753Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy.

Published online by Cambridge University Press:  03 September 2012

Abigail Bell ,
Ian Harrison ,
Dimitris Korakakis ,
Eric C. Larkins ,
J. M. Hayes  and
M. Kuball
Abigail Bell
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
Ian Harrison
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
Dimitris Korakakis
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
Eric C. Larkins
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK
J. M. Hayes
Affiliation:
H.H.Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, UK
M. Kuball
Affiliation:
H.H.Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, UK
Get access

Abstract

Photoluminescence (PL) spectroscopy has been used to investigate the effect annealing has on molecular beam epitaxially grown GaN in different ambients. By observing the changes in the PL spectra as a function of ambient temperature and atmosphere used, important information concerning the origin of defects within GaN has been found. Samples were annealed in different atmospheres, (including oxygen, oxygen and water vapour, nitrogen and argon), different temperatures. In the 2.0eV-2.8eV region of the PL spectra, two peaks appeared at approximately 2.3eV and 2.6eV, somewhat higher than the usual yellow luminescence peak. We find that the 2.6eV peak is dominant for high annealing temperatures and the 2.3eV peak dominates at low annealing temperatures for the samples annealed in oxygen. When annealed in argon and nitrogen the 2.6eV peak dominates at all annealing temperatures. Changes in the PL spectra between anneals were also seen in the 3.42eV region. The 3.42eV peak is often assigned to excitons bound to stacking faults. Power resolved measurements indicate that in our sample the cause is a donor acceptor pair transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.51
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ogino, T. and Aoki, M., Jpn.J.Appl.Phys. 19 p2395 (1980)Google Scholar
[2] Glaser, E.R., Kennedy, T.A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Freitas, J.A. Jr, Khan, M. Asif, Olsen, D.T., Kuznia, J.N. and Wickenden, D.K., Phys.Rev.B 51 p13326 (1995)Google Scholar
[3] Ponce, F.A., Bour, D.P., Gotz, W. and Wright, P.J., Appl.Phys.Lett. 68 p57 (1996)Google Scholar
[4] Reynolds, D.C., Look, D.C., Jogai, B., Norstrand, J.E. Van, Jones, R. and Jenny, J., Solid State Commun., 106 p701 (1998)Google Scholar
[5] Chung, B-C and Gershenzon, M, J.Appl.Phys. 72 p651 (1992)Google Scholar
[6] Albrecht, M., Christiansen, S., Salviati, G., Zanotti-Fregonara, C., Rebane, Y.T., Shreter, Y.G., Mayer, M., Pelzmann, A., Kamp, M., Ebeling, K.J., Bremser, M.D., Davis, R.F. and Strunk, H.P., Mat.Res.Soc.Symp.Proc.Vol.468 p293 (1997)Google Scholar
[7] Rebane, Y.T., Shreter, Y.G., and Albrecht, M., Mat.Res.Soc.Symp.Proc.Vol.468 p179 (1997)Google Scholar
[8] Rebane, Y.T., Shreter, Y.G., and Albrecht, M., phys.stat.sol.(a) 164 141 1997 Google Scholar
[9] Fischer, S., Steude, G., Hofmann, D.M., Kurth, F., Anders, F., Topf, M., Meyer, B.K., Bertram, F., Schmidt, M., Christen, J., Eckey, L., Holst, J., Hoffmann, A., Mensching, B., Rauschenbach, B., J.Cryst.Growth 189/190 p556 (1998)Google Scholar
[10] Salviati, G., Zanotti-Fregonara, C., Albrecht, M., Christiansen, S., Strunk, H.P., Mayer, M., Pelzmann, A., Kamp, M., Ebeling, K.J., Bremser, M.D., Davis, R.F., Shreter, Y.G., Inst.Phys.Conf.Ser. 157 p199 (1997)Google Scholar
[11] Lagerstedt, O. and Monemar, B., J.Appl.Phys. 45 p2266 (1974)Google Scholar
[12] Hayes, J.M., Kuball, M., Bell, A., Harrison, I., Korakakis, D., and Foxon, C.T., Appl. Phys. Lett. 75 p2097 (1999)Google Scholar
[13] Bebb, H.B. and Williams, E.W., Semicond. Semimet., 8 p4–5 (1972)Google Scholar
[14] Oh, Eunsoon, Kim, Bonjin, Park, Hyeongsoo, and Park, Yongjo, Appl.Phys.Lett. 73 p1883 (1998)Google Scholar