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Study of a-Si:H/μc-Si:H Heterojunction as Photosensor for Large Screen Projection Display

Published online by Cambridge University Press:  21 February 2011

Weiqiang Han ,
Gaorong Han ,
Jianmin Qiao ,
Pija Du ,
Danmei Zhao  and
Zishang Ding
Weiqiang Han
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Gaorong Han
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Jianmin Qiao
Affiliation:
Present Address: Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Pija Du
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Danmei Zhao
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Zishang Ding
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
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Abstract

Liquid crystal light valve(LCLV) using an a-Si:H/μc-Si:H heterostructure as the photosensor and the nematic liquid crystal as the modulator has been firstly presented for large screen projection display. The a-Si:H photoconductor and μc-Si:H light blocking layer were prepared by a modified glow discharge CVD method. The optoelectric and structure properties of the μc-Si:H films deposited at different deposition conditions have been studied. The a-Si:H film and the continuously deposited pc-Si:H film possibly form an a-Si:H/μc-Si:H heterojunction. The electrical and optoelectric properties of the heterojunction has been studied.

LCLV using a-Si:H/μc-Si:H heterostructure has shown that the most aspects of the device performance can be improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1099
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Grinberg, J., Jacobason, A., Bleha, W., Miller, L., Fraas, L., Boswell, D., and Myer, G., Optic. Eng., 14, 217 (1975).CrossRefGoogle Scholar
2. Beard, T.D., Beard, W.P., and Wong, S.-Y., Appl. Phys. Lett., 22, 90 (1973).CrossRefGoogle Scholar
3. Bleha, W.P., Lipton, L.T., Wiener-Avnear, E., Grinberg, J., Reif, P.G., Casasent, D., Brown, H.B., and Markevitch, B.V., Optic. Eng., 17, 371 (1978).CrossRefGoogle Scholar
4. Efron, U., Grinberg, J., Braatz, P.O., Little, M.J., Reif, P.G., and Schwartz, R.N., J. Appl. Phys., 57, 1356 (1989).CrossRefGoogle Scholar
5. Peng, S., Wu, Q., and Tang, J., SPIE, 1151, 534 (1989).Google Scholar
6. Moddel, G., Johnson, K.M., Li, W., and Rice, R.A., Appl. Phys. Lett, 55, 537 (1989).CrossRefGoogle Scholar
7. Qiao, J., Han, G., Du, P., Hang, W., Huang, W., and Ding, Z., Amorphous Silicon Technology, 217, ed. byGoogle Scholar
8. Du, P., Han, G., Han, W., Zhan, D., Ding, Z., and Qiao, J., in this volume, (1992).Google Scholar