Article contents
The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry
Published online by Cambridge University Press: 15 February 2011
Abstract
We have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1982
References
REFERENCES
- 2
- Cited by