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Study of Electrical Transport Across Interfaces between Wide Gap Semiconductor and Metal Oxides

Published online by Cambridge University Press:  15 February 2011

V. Talyansky ,
R. D. Vispute ,
R. P. Sharma ,
S. Choopun ,
M. J. Downes ,
T. Venkatesan ,
A. A. Iliadis ,
M. C. Wood ,
R. T. Lareau  and
K. A. Jones
V. Talyansky
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, vitaly@squid.umd.edu
R. D. Vispute
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, vitaly@squid.umd.edu
R. P. Sharma
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, vitaly@squid.umd.edu
S. Choopun
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, vitaly@squid.umd.edu
M. J. Downes
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, vitaly@squid.umd.edu
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, vitaly@squid.umd.edu
A. A. Iliadis
Affiliation:
Department of Electrical Engineering, University of Maryland, College Park, MD 20742
M. C. Wood
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-DB, Fort Monmouth, N.J. 07703
R. T. Lareau
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-DB, Fort Monmouth, N.J. 07703
K. A. Jones
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-DB, Fort Monmouth, N.J. 07703
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Abstract

We have grown YBa2Cu3O7 (YBCO) and Pr1.85Ce0.15CuO4 (PCCO) polycrystalline films on n-type GaN using pulsed laser deposition. The diodes fabricated out of these heterostructures exhibited a strong rectifying behavior with transport characteristics that were found to fit well to the thermionic emission model. The effective barrier heights for YBCO and PCCO based diodes were found to be 788 meV and 236 meV, respectively. Rutherford Backscattering structural analysis of the heterostructures is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 119
Copyright
Copyright © Materials Research Society 1997

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References

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