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Study of GaSb Junction Devices by Cathodoluminescence and Scanning Tunneling Spectroscopy

Published online by Cambridge University Press:  10 February 2011

P. Hidalgo ,
B. Méndez ,
J. Piqueras  and
P. S. Dutta
P. Hidalgo
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 28040 Madrid, Spain
B. Méndez
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 28040 Madrid, Spain
J. Piqueras
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 28040 Madrid, Spain
P. S. Dutta
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
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Abstract

GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to study the homogeneity of the diffusion treatment. Spectra recorded by current imaging tunneling spectroscopy (CITS) in the n and p sides of the junction, clearly show the respective conductive behaviour and provide information on the local surface band gaps. Results are related to the diffusion profile measured by secondary ion mass spectrometry (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 239
Copyright
Copyright © Materials Research Society 2000

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