Hostname: page-component-77c89778f8-cnmwb Total loading time: 0 Render date: 2024-07-16T19:59:54.887Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Low-Energy Ion Assisted Epitaxy of Gan Films: Influence of the Initial Growth Rate

Published online by Cambridge University Press:  10 February 2011

J. W. Gerlach ,
D. Schrupp ,
R. Schwertberger ,
B. Rauschenbach  and
A. Anders
J. W. Gerlach
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, juergen.gerlach@physik.uni-augsburg.de
D. Schrupp
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, juergen.gerlach@physik.uni-augsburg.de
R. Schwertberger
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, juergen.gerlach@physik.uni-augsburg.de
B. Rauschenbach
Affiliation:
Universität Augsburg, Institut für Physik, Universitätsstr. 1, D-86135 Augsburg, juergen.gerlach@physik.uni-augsburg.de
A. Anders
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Get access

Abstract

The deposition of thin epitaxial hexagonal gallium nitride films on c-plane sapphire by low-energy nitrogen ion assisted deposition is shown to result in films of high crystalline quality. The quality can be further heightened by using the concept of an isothermal growth rate ramp. Characterization of film structure, defect density distribution and surface topography by XRD, RBS/C, and AFM, respectively, reveals the importance of the nitrogen ion energy and the ion to atom ratio on the film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 239
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lee, N.-E., Powell, R.C., Kim, Y.-W., and Greene, J.E., J. Vac. Sci. Technol. A 13, 2293(1995).Google Scholar
2. Jeon, C.-W., Kim, S.-H. and Kim, I.-H., Thin Solid Films 270, 16(1995).Google Scholar
3. Leung, M.S.H., Klockenbrink, R., Kisielowski, C., Fujii, H., Kriger, J., Sudir, , Sudhir, G.S., Anders, A., Z. Lilienthal-Weber, Rubin, M., and Weber, E.R., Mat. Res. Soc. Symp. Proc. Vol. 449, 221(1997).Google Scholar
4. Headrick, R.L., Kycia, S., Wol, A.R.1, Brock, J.D., Murty, M.V. Ramana, Phys. Rev. B 58, 4818(1998).Google Scholar
5. Gerlach, J.W., Schwertberger, R., Schrupp, D. and Rauschenbach, B., Surf. Coat. Technol. (to be published).Google Scholar
6. Böer, K.W., Survey of Semiconductors, Vol. 1, Van Nostrand Reinhold, New York 1990, p. 629.Google Scholar
7. Anders, A. and Anders, S., Plasma Sources Sci. Technol. 4, 571(1995).Google Scholar
8. Brice, D.K., Tsao, J.Y., Picraux, S.T., Nucl. Instr. Meth. B 44, 68(1989).Google Scholar
9. Okumura, H., Balakrishnan, K., Hamaguchi, H., Koizumi, T., Chichibu, S., Nakanishi, H., Nagatomo, T., Yoshida, S., J. Cryst. Growth 189/190, 364 (1998).Google Scholar