Hostname: page-component-5c6d5d7d68-wpx84 Total loading time: 0 Render date: 2024-08-23T07:13:47.840Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Ni(Pt) germanosilicides formation on fully-strained Si0.9Ge0.1 and Si0.899Ge0.1C0.001 by Raman Spectroscopy

Published online by Cambridge University Press:  17 March 2011

J. Y. Y. Chaw ,
K. L. Pey ,
P. S. Lee ,
D. Z. Chi  and
J. P. Liu
J. Y. Y. Chaw
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Avenue, Nanyang Technological University, Singapore, 639798
K. L. Pey
Affiliation:
School of Electrical & Electronic Engineering, Nanyang Avenue, Nanyang Technological University, Singapore, 639798
P. S. Lee
Affiliation:
School of Materials Engineering, Nanyang Avenue, Nanyang Technological University, Singapore, 639798
D. Z. Chi
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore, 117602
J. P. Liu
Affiliation:
Chartered Semiconductor Manufacturing Ltd., Woodlands Industrial Park D, Street 2, Singapore, 738406
Get access

Abstract

In this work, Raman spectroscopy was used to study the reaction of pure Ni and Ni(Pt 5 at. %) with fully-strained Si0.9Ge0.1 and Si0.899Ge0.1C0.001. With pure Ni, it was found that the incorporation of 0.1% C in the substrate resulted in out-diffusion of Ge from the germanosilicide film at a lower rapid thermal annealing (RTA) temperature compared to that of pure Ni on Si0.9Ge0.1. This Ge out-diffusion phenomenon is evident from the gradual shift in the NiSi1-wGew (w ≤ x) Raman peak from ∼213 cm−1 to higher wavenumbers, closer to 217 cm−1 as reported for pure Ni/Si, indicating that Ge is being depleted from the film with increasing RTA temperatures. In addition, it was found that severe agglomeration of the germanosilicide film occurred at a lower RTA temperature for the Ni/Si0.899Ge0.1C0.001 system. This corresponds to the observations from the Raman spectra, where a sharp increase in the Si substrate peak at 520 cm−1 was observed, coupled with the appearance of the transverse acoustic (TA)-phonon peak of Si at 301 cm−1. When Pt was introduced into the Ni film, significant improvements were observed for the germanosilicide films on Si0.9Ge0.1 and Si0.899Ge0.1C0.001 substrates, both in terms of Ge out- diffusion and agglomeration. Initial findings show that the addition of Pt promotes the formation of the low resistivity mono-germanosilicide phase at temperatures as low as 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C4.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iwai, H., Ohguro, T. and Ohmi, S., Microelectronics Engineering, 60, 157 (2002).Google Scholar
2. Xiang, Q., Goo, J.-S., Pan, J., Yu, B., Ahmed, S., Zhang, J. and Lin, M.-R., VLSI Tech. Digest, 101 (2003).Google Scholar
3. Maiti, C. K., Chakrabarti, N. B. and Ray, S. K. (eds.), Strained silicon heterostructures: materials and devices, (Institution of Electrical Engineers, 2001) pp. 60–61.Google Scholar
4. Zhang, S.-L., Microelectronics Engineering, 70, 174 (2003).Google Scholar
5. Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., Osipowicz, T. and See, A., Electrochem. Solid-State Lett., 5, G15 (2002).Google Scholar
6. Zhao, H. B., Pey, K. L., Choi, W. K., Chattopadhyay, S., Fitzgerald, E. A., Antoniadis, D. A. and Lee, P. S., J. Appl. Phys., 92, 214 (2002).Google Scholar
7. Hallstedt, J., Blomqvist, M., Persson, P. O. A., Hultman, H. and Radamson, H. H., J. Appl. Phys., 95, 2397 (2004).Google Scholar
8. Lee, P. S., Mangelinck, D., Pey, K. L., Shen, Z. X., Ding, J., Osipowicz, T. and See, A., Electrochem. Solid-State Lett., 3, 153 (2000).Google Scholar
9. Perez-Rodriguez, A., Roca, E., Jawhari, T., Morante, J. R. and Schreutelkamp, R. J., Thin Solid Films, 251, 45 (1994).Google Scholar
10. Pey, K. L., Choi, W. K., Chattopadhyay, S., Zhao, H. B., Fitzgerald, E. A., Antoniadis, D. A. and Lee, P. S., J. Vac. Sci. Technol. A, 20, 1903 (2002).Google Scholar
11. Seger, J., Zhang, S.-L., Mangelinck, D. and Radamson, H. H., Appl. Phys. Lett., 81, 1978 (2002).Google Scholar
12. Ottaviani, G., Tu, K. N., Chu, W. K., Hung, L. S. and Mayer, J. W., J. Appl. Phys., 53, 4903 (1982).Google Scholar