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Study of Oxygen-Ion-Beam-Assisted Evaporated Aluminum Oxide Films

Published online by Cambridge University Press:  25 February 2011

W. Franzen ,
T. Tetreault ,
W. Kosik ,
W. Croft  and
J. K. Hirvonen
W. Franzen
Affiliation:
Army Research Laboratory, Materials Directorate, Arsenal Street, Watertown, MA 02172
T. Tetreault
Affiliation:
Spire Corporation, 1 Patriots Park, Bedford, MA 01730
W. Kosik
Affiliation:
Army Research Laboratory, Materials Directorate, Arsenal Street, Watertown, MA 02172
W. Croft
Affiliation:
Army Research Laboratory, Materials Directorate, Arsenal Street, Watertown, MA 02172
J. K. Hirvonen
Affiliation:
Army Research Laboratory, Materials Directorate, Arsenal Street, Watertown, MA 02172
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Abstract

Aluminum oxide films have been deposited by electron-beam evaporation on heated substrates under oxygen ion bombardment. Substrates were crystalline silicon, grafoil and glass. Both substrat temperature and ion current density were changed for each deposition The films deposited on silicon were examined by spectroscopie ellipsometry which showed that for substrate temperatures between 70°C and 250°C the index of refraction, and therefore the film density, first rose and then decreased with increasing ion current density. Ai 400°C the index reached a plateau under these conditions. Study by Rutherford backscattering of films deposited on grafoil showed no significant correlation between oxygen-aluminum stoichiometry and fi; density, suggesting that the decrease in density for large ion currei is not due to oxygen-ion incorporation, as has been suggested in the past. The films deposited on glass at 400°C showed some evidence of crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 825
Copyright
Copyright © Materials Research Society 1993

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References

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