Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-18T09:32:10.328Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Solar Cells by Sem Dark Voltage Contrast

Published online by Cambridge University Press:  28 February 2011

S. Mil'Shtein ,
S. Iatrolt ,
D. Kharas ,
R. O. Bell  and
D. Sandstrom
S. Mil'Shtein
Affiliation:
EE Dept Umass Lowell, MA, Mobil Solar CO., Billerica, MA.
S. Iatrolt
Affiliation:
EE Dept Umass Lowell, MA, Mobil Solar CO., Billerica, MA.
D. Kharas
Affiliation:
Chelmsford High School, MA, Mobil Solar CO., Billerica, MA.
R. O. Bell
Affiliation:
EE Dept Umass Lowell, MA, Mobil Solar CO., Billerica, MA.
D. Sandstrom
Affiliation:
EE Dept Umass Lowell, MA, Mobil Solar CO., Billerica, MA.
Get access

Abstract

For the first time the Scanning Electron Microscopy (SEM) Dark Voltage Contrast (DVC) technique was used to examine the field distribution in a solar cell made of polycrystalline silicon.

The samples were cut off solar cells made of Edge-defined Film-fed Grown (EFG) Silicon and lapped at 2 and 5 degree angles. The DVC measurements were performed at forward, reverse, and zero bias conditions using a Hitachi S-570 SEM and a Kevex-8000 microanalyzer.

The I-V curves were recorded to test the electric performance of the samples. We examined two groups of solar cells. One group of cells demonstrated, after regular processing, reasonable electrical performance and abrupt DVC profile. The other group was intentionally doped with titanium, which presumably was agglomerated in the p-n junction area thus degrading completely the electrical performance of the cells and weakening the electric field by a factor of 4–6.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 921
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sze, S.M., “Semiconductor Devices, Physics and Technology”, John Wiley & Sons, pg. 83–96 (1988).Google Scholar
2. Neudeck, G.W., “The p-n Junction Diode,” Addison-Wesley, p. 64, 93 (1989).Google Scholar
3. Mil'shtein, S., Jour. of Defects and Radiation Effects in Solids, 111, 257–262 (1989).Google Scholar
4. Kordic, S., Van Loenen, E.J., Walker, A.J., IEEE, Electron Device Letters 12 (8) 422 (1991).Google Scholar
5. Kordic, S., Van Loenen, E.J., Dijkamp, D., Hoeven, A.J., and Moraal, H.K., J. Vac. Sci. Technol. A (1), 549 (1990).Google Scholar
6. Hoska, Sumio, Hosoki, Shigeyuki, Takata, Keiji, Horiudi, Satsudada, and Norsuaki, Nobuyoski, Appl. Phys. Lett. 53 (6), 487 (1988).Google Scholar
7. Mil'shtein, S., latrou, S., Bell, R.O., Sandstorm, D., First Hong Kong Workshop on Semiconductor, Hong Kong, August (1992.)Google Scholar
8. Borenstein, J.T., Hanoka, J.I., Bathey, B.R., Kalejs, J.P., and Mil'shtein, S., Appl. Phys. Lett. (To be published)Google Scholar