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A Study on the Mechanism for the Influence of High Density of Defect Movement on the Leakage Current of PN Junction
Published online by Cambridge University Press: 16 February 2011
Abstract
The results in the paper show that high defect density appears during rapid thermal annealing. The spreading of the defect distribution increases with increasing of the annealing time. So the leakage current increases up. It is found that the PN junction leakage current for short annealing time(5s) and for hot implantation are obviously lower than that of RT implantation. The mechanism of the leakage current reduction is discussed.
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- Copyright © Materials Research Society 1990