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Sub-Bandgap Optical Absorption in Amorphous Silicon using Photo-Pyroelectric Spectroscopy

Published online by Cambridge University Press:  21 February 2011

J. Fan
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

Measurements of the optical absorption spectrum of doped and undoped hydrogenated amorphous silicon (a-Si:H) for photon energies ranging from 0.8 to 2.5 eV are obtained using photo-pyroelectric spectroscopy (PPES). This technique, based upon the pyroelectric effect, has a simpler experimental set-up than photo-thermal deflection spectroscopy, and presently has a sensitivity of ad > 10-3, where d is the sample thickness. In addition, using PPES we have measured the non-radiative quantum efficiency in a-Si:H, and find that it has a strong wavelength dependence for sub-bandgap illumination.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Jackson, W. B., Amer, N. M., Boccara, A. C. and Fournier, D., Appl. Optics 20, 1333 (1981).CrossRefGoogle Scholar
2. Coufal, H. J., Appl. Phys. Lett. 44, 59 (1984); Appl. Phys. Lett. 45, 516 (1984).Google Scholar
3. Tanaka, K., Ichimura, Y. and Sindoh, K., J. Appl. Phys. 63, 1815 (1988).Google Scholar
4. Coufal, H. J., Grygier, R. K., Home, D. E. and Fromm, J. E., J. Vac. Sci. Tech. A 5, 2875 (1987).Google Scholar
5. Mandelis, A., Wagner, R. E., Ghandi, K., Baltman, R. and Dao, P., Phys. Rev. B 39, 5254 (1989).CrossRefGoogle Scholar
6. PVDF KynarR film available from Penwalt Corp., Piezo Film Dept., P.O. Box 799, Valley Forge, PA 19482.Google Scholar
7. Jackson, W. B. and Amer, N. M., Phys. Rev. B 25, 5559 (1982).CrossRefGoogle Scholar
8. Street, R. A., Phys. Rev. Lett. 49, 1187 (1982).Google Scholar
9. Amer, N. M. and Jackson, W. B., Semiconductors and Semimetals, ed. by Pankove, J. I. (Academic Press, Orlando, FL) 21B, 94 (1984).Google Scholar
10. Fan, J. and Kakalios, J., to be published.Google Scholar
11. Gu, S. and Taylor, P. C., private communication.Google Scholar