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Submicron Scale Interface Roughness in Quantum Wells Observed by High-Resolution Cathodoluminescence Microscopy
Published online by Cambridge University Press: 25 February 2011
Abstract
A single quantum well (SQW) is grown at a high substrate temperature and low growth rate (HTLR growth) in order to reduce interface roughness. The lateral well thickness variation in the SQW is characterized by the cathodolumincscence microscopy. It is clarified that HTLR growth can be applied to make a smooth interface for advanced devices.
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- Copyright © Materials Research Society 1993