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Summary of Panel Discussion “Substrate Issues for Wide Bandgap Semiconductors”

Published online by Cambridge University Press:  21 February 2011

Max N. Yoder  and
Peter K. Bachmann
Max N. Yoder
Affiliation:
Office of Naval Research, Arlington, VA 22217–5660
Peter K. Bachmann
Affiliation:
Philips GmbH Forschungslaboratorien, Aachen, Germany Hiroyuki Matsunami, Kyoto University, Kyoto, Japan Hadis Morkoc, University of Illinois, Urbana, IL
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Extract

The state-of-the-art in each of the major materials (Diamond, SiC and III-nitrides) was discussed with the advantages, disadvantages, and requirements of each enumerated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 3
Copyright
Copyright © Materials Research Society 1994

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