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Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

Published online by Cambridge University Press:  01 February 2011

Christos F. Karanikas
Affiliation:
ckaranik@acad.umass.edu, University of Massachusetts - Amherst, Chemical Engineering, 120 Governors Drive, Amherst, MA, 01003, United States, 413-545-9685, 413-545-1647
James J. Watkins
Affiliation:
watkins@polysci.umass.edu, University of Massachusetts, Polymer Science and Engineering, Amherst, MA, 01003, United States
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Abstract

The kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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