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Suppression of the Phase Transition and Agglomeration of TiSi2 by Addition of Zr Element

Published online by Cambridge University Press:  10 February 2011

Sanghyun Yoon  and
Hyeongtag Jeon
Sanghyun Yoon
Affiliation:
Division of Materials Science and Engineering, CPRC, Hanyang Univ., Seoul, Korea, 133-791
Hyeongtag Jeon
Affiliation:
Division of Materials Science and Engineering, CPRC, Hanyang Univ., Seoul, Korea, 133-791
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Abstract

The formation of C49 TiSi2 phase at high temperatures was investigated by adding the Zr contents in Ti-silicide film. Stabilizing the C49 TiSi2 phase which exhibits lower surface and interface energies than those of the C54 TiSi2 phase at high temperatures was expected to suppress the problems of Tisilicide, such as the phase transition and the film agglomeration. The thin films of Ti and Zr were codeposited (40 nm) on Si substrates in the dual e-beam evaporation system equipped with an ion pump and its base pressure of ∼5 × 10−9 torr. The amounts of Zr contents (5 and 10 atomic %) added on Tisilicide were monitored by in-situ quartz crystal monitor. Immediately after the deposition, this film was annealed by ex-situ vacuum furnace at temperatures between 600 °C and 900 °C in 100 °C increments. The identification of the phase and the chemical composition were investigated by XRD and AES, respectively. The surface and interface morphologies were examined using cross-sectional TEM. The phase transition temperature of TiSi2 was raised with increasing Zr contents. The agglomeration of TiSi2 film was also suppressed by adding Zr element and much improved interface morphologies were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 225
Copyright
Copyright © Materials Research Society 1998

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References

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