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Surface acoustic wave resonator from thick MOVPE-grown layers of GaN(0001) on sapphire

Published online by Cambridge University Press:  11 February 2011

Sverre V. Pettersen ,
Thomas Tybell ,
Arne Rønnekleiv ,
Stig Rooth ,
Veit Schwegler  and
Jostein K. Grepstad
Sverre V. Pettersen
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
Thomas Tybell
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
Arne Rønnekleiv
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
Stig Rooth
Affiliation:
Alcatel Space Norway AS, Knudsrødveien 7, N-3190 Horten, NORWAY
Veit Schwegler
Affiliation:
Department of Optoelectronics, University of Ulm, Albert Einstein Allee 45, D-89081 Ulm, GERMANY.
Jostein K. Grepstad
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, O.S. Bragstads Plass 2A, N-7491 Trondheim, NORWAY
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Abstract

We report on fabrication and measurement of a surface acoustic wave resonator prepared on ∼10m thick GaN(0001) films. The films were grown by metal-organic vapor phase epitaxy on a c-plane sapphire substrate. The surface morphology of the films were examined with scanning electron and atomic force microscopy. A metallic bilayer of Al/Ti was subsequently evaporated on the nitride film surface. Definition of the resonator interdigital transducers, designed for a wavelength of λ=7.76m, was accomplished with standard UV lithography and lift-off. S-parameter measurements showed a resonator center frequency f0=495MHz at room temperature, corresponding to a surface acoustic wave velocity of 3844m/s. The insertion loss at center frequency was measured at 8.2dB, and the loaded Q-factor was estimated at 2200. Finally, measurements of the resonator center frequency for temperatures in the range 25–155°C showed a temperature coefficient of -18ppm/°C. The intrinsic GaN SAW velocity and electromechanical coupling coefficient were estimated at νSAW=383 1m/s and K2=1.8±0.4·10−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.37
Copyright
Copyright © Materials Research Society 2003

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References

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