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Surface Cleaning for Silicon Epitaxy Using Photoexcited Fluorine Gas

Published online by Cambridge University Press:  21 February 2011

Takayuki Aoyama ,
Tatsuya Yamazaki  and
Takashi Ito
Takayuki Aoyama
Affiliation:
Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Tatsuya Yamazaki
Affiliation:
Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Takashi Ito
Affiliation:
Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

We studied surface cleaning using photoexcited fluorine gas diluted with hydrogen (UV/F2/H2). We found that UV/F2/H2 cleaning selectively removes native Si oxides from thermal oxides without etching the bulk Si. After UV/F2/H2 cleaning, hydrogen atoms terminate almost all the dangling bonds on the Si surface, and fluorine atoms terminate the few remaining bonds. UV/F2/H2 cleaning also flattens the Si surface. We applied UV/F2/H2 cleaning to Si epitaxy and obtained single-crystal Si films with preannealing and growth temperatures as low as 600°C, 150°C lower than for conventional methods. UV/F2/H2 cleaning is a good dry precleaning method for various processes that include Si epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 269
Copyright
Copyright © Materials Research Society 1994

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References

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