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Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN

Published online by Cambridge University Press:  01 February 2011

Jun Suda ,
Hiroyasu Yamashita ,
Robert Armitage ,
Tsunenobu Kimoto  and
Hiroyuki Matsunami
Jun Suda
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 615–8510, Japan
Hiroyasu Yamashita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 615–8510, Japan
Robert Armitage
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 615–8510, Japan
Tsunenobu Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 615–8510, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 615–8510, Japan
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Abstract

Zirconium diboride (ZrB2) is a promising lattice-matched substrate for GaN-based materials. A key issue to realize high-quality heteroepitaxial growth is preparation of the substrate surface. The ZrB2 surface was studied by x-ray photoemission spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). XPS results indicated the presence of both ZrO2 and ZrB2 on the as-received substrate surface. Thermal cleaning at 1000°C in ultra-high vacuum, Ar+ ion sputtering, and wet chemical treatments were examined as surface preparation methods. After treatment with HF acid, the O peak intensity was much reduced. The combination of HF treatment and thermal cleaning resulted in sharp and intense RHEED from the ZrB2 surface. GaN grown on the surface by molecular-beam epitaxy exhibited intense photoluminescence, suggesting that this treatment is effective to obtain high-quality GaN on ZrB2 substrates.

Type
articles
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.65
Copyright
Copyright © Materials Research Society 2004

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References

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