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Surface Reaction Mechanisms in the Metallisation and Etching of Semiconductor Materials.

Published online by Cambridge University Press:  25 February 2011

A Wee ,
A J Murrell ,
C L French ,
R J Price ,
R B Jackman  and
J S Foord
A Wee
Affiliation:
University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford, OXI 3QR. UK.
A J Murrell
Affiliation:
University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford, OXI 3QR. UK.
C L French
Affiliation:
University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford, OXI 3QR. UK.
R J Price
Affiliation:
University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford, OXI 3QR. UK.
R B Jackman
Affiliation:
University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford, OXI 3QR. UK.
J S Foord*
Affiliation:
University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford, OXI 3QR. UK.
*
*to whom correspondence should be addressed.
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Abstract

Surface spectroscopic techniques have been used to investigate aluminium deposition form tri-methyl aluminium (TMA) on Si(100), and the etching of InP by chlorine. Thermal reactions and processes stimulated by UV lamps and ion beams are examined. The results are interpreted in the light of the adsorption states which are formed and the surface transformations of chemical states which are observed to occur.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 351
Copyright
Copyright © Materials Research Society 1989

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References

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