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Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

Published online by Cambridge University Press:  17 March 2011

A.H.M. Smets ,
D.C. Schram  and
M.C.M. van de Sanden
A.H.M. Smets
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The NetherlandsA.H.M.Smets@phys.tue.nl
D.C. Schram
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands Eindhoven University of Technology, Department of Applied Physics, Center for Plasma Physics and Radiation Technology, P.O. Box 513, 5600 MB Eindhoven, The NetherlandsM.C.M.v.d.Sanden@phys.tue.nl
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Abstract

The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution in time, is determined for a-Si:H growth using in situ single wavelength (632.8 nm) rotating compensator ellipsometry. β is measured as function of the substrate temperature for three different growth rates 2, 5 and 22 Ås-1 under conditions where SiH3 dominantly contributes to growth. β (≤ 0.5) decreases with increasing substrate temperature and does not strongly depend on the growth rate within the range of growth rates. A roughness evolution model is proposed, based upon a random generation of active growth sites and a subsequent site dependent surface diffusion process. The measured β temperature dependence can be simulated with an activated site hopping activation energy of about 1.0 eV. This activation energy is much higher than what would be expected from a model based upon the diffusion of physisorbed silyl SiH3 radical and suggests therefore another mechanism which is responsible for the surface smoothening during a-Si:H growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A7.6
Copyright
Copyright © Materials Research Society 2000

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References

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