Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-19T16:29:29.891Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface States on a-Si:H,F Grown from SiF4 and H2

Published online by Cambridge University Press:  25 February 2011

A. Maruyama ,
J. Z. Liu ,
V. Chu ,
D. S. Shen  and
S. Wagner
A. Maruyama
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Get access

Abstract

We describe a detailed study of surface states on a-Si:H, F films deposited by DC-plasma from SiF4 and H2. In the a-Si:H, F growth from these source gases, the density of surface states (Nss) and the Urbach Energy (Eu) show a reciprocal relation, meaning that the film grown with less bond distortion is accompanied by a higher density of surface states. These surface states can be reduced by keeping the films at growth temperature after termination of growth; immediate cooling produces a high density. This suggests that bonds can rearrange on or near the film surface at growth temperature, after growth termination. Nss can be made as high as l×1014 cm−2. The surface states can be measured by optical subgap absorption, but do not give an ESR signal. A high density of these surface states lowers the Pd-Schottky barrier height. Time-of flight electron collection data show that the surface states act as deep electron traps, located at about 0.4eV below the conduction band edge. We present and discuss other experimental results to help understand these nature of the surface state on a-Si:H, F.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 705
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

a) On leave from Canon Inc. Tokyo, Japan.Google Scholar
b) Present address: Glasstech Solar, Inc., Wheatridge, Colorado 80033.Google Scholar
[1] Ovshinsky, S. and Madan, A., Nature, 276, 482 (1978)Google Scholar
[2] Nozawa, K., Yamaguchi, Y., Hanna, J. and Shimizu, I., J. Non-Cryst. Solids, 59&60 533 (1983).CrossRefGoogle Scholar
[3] Hanna, J., Shibata, N., Fukuda, K., Ohtoshi, H., Oda, S., and Shimizu, I., in Disordered Semiconductors, (Plenum, New York, 1987), p.435.CrossRefGoogle Scholar
[4] Nishida, S., Shiimoto, T., Yamada, A., Karasawa, S., Konagai, M. and Takahashi, K., Appl.Phys.Lett. 49, 79 (1986).CrossRefGoogle Scholar
[5] Maruyama, A., Shen, D.S., Chu, V., Liu, J.Z., and Wagner, S., to be publishedGoogle Scholar
[6] Slobodin, D., Aljishi, S., Schwarz, R., and Wagner, S., in Materials Issues in Applications of Amorphous Silicon Technology, edited by Adler, D., Madan, A., and Thompson, M.J. (Mater. Res. Soc. Proc. 48, Pittburgh, PA 1985), pp. 153–158.Google Scholar
[7] Wronski, C.R., Smith, Z E., Aljishi, S., Chu, V., Shepard, K., Shen, D.S., Schwarz, R., Slobodin, D., and Wagner, S., AIP Conf., 157, edited by B. Stafford and E. Sabisky 70 (1987)Google Scholar
[8] Jackson, W.B., Biegelson, D.K., Nemanich, R.J., and Knights, J.C., Appl. Phys. Lett. 42, 105 (1983)CrossRefGoogle Scholar
[9] Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Chu, T.L., and Wagner, S., Appl. Phys. Lett. 50, 1521 (1987).CrossRefGoogle Scholar
[10] Faure, M., Curtins, H., and Shah, A.V., J. Non-Cryst. Solids 97&98, 731 (1987)Google Scholar
[11] Mott, N.F. and Davis, E.A., “Electronic Properties in Non-Crystalline Materials,” Oxford University Press, New York, 1979 Google Scholar
[12] Fowler, R.H., Phys. Rev., 38, 45 (1931)CrossRefGoogle Scholar
[13] Karg, F., Kruhler, W., Moller, M., and Klitzing, K.v., J. Appl. Phys., 60, 2016 (1986)CrossRefGoogle Scholar
[14] Shen, D.S., Conde, J.P., Chu, V., Liu, J.Z., Aljishi, S., Smith, Z E., Maruyama, A., and Wagner, S., Appl. Phys. Lett. 53, 1542 (1988)CrossRefGoogle Scholar
[15] LeComber, P.G., and Spear, W.E., Phil. Mag. B 53, L1 (1986)CrossRefGoogle Scholar
[16] Winer, K., and Ley, L., Phys. Rev. B 37, 8386 (1988)CrossRefGoogle Scholar