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Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

Published online by Cambridge University Press:  22 February 2011

John T.A. Pollock  and
Alex Rose
John T.A. Pollock
Affiliation:
Csiro, Division of Chemical Physics, Lucas Heights Research Laboratories, NSW, 2232, Australia.
Alex Rose
Affiliation:
Csiro, Division of Chemical Physics, Lucas Heights Research Laboratories, NSW, 2232, Australia.
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Abstract

From reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 633
Copyright
Copyright © Materials Research Society 1984

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References

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