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Switching Effects, Current Fluctuations and Lateral Photovoltage - The Electrical Appearance of A-Si:H/Metal Multilayers

Published online by Cambridge University Press:  16 February 2011

Andreas N. Panckow ,
T.P. Drüsedau  and
U. Schmidt
Andreas N. Panckow
Affiliation:
Institut für Experimentelle Physik der Otto-von-Guericke-Universität Magdeburg, PSF 4120, 39016 Magdeburg, Germany
T.P. Drüsedau
Affiliation:
Institut für Experimentelle Physik der Otto-von-Guericke-Universität Magdeburg, PSF 4120, 39016 Magdeburg, Germany
U. Schmidt
Affiliation:
Fachbereich Physik und Forschungsschwerpunkt Materialwissenschaften der Universität Kaiserslautern, PSF 3049, 67663 Kaiserslautern, Germany
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Abstract

Multilayer systems (MLS) consisting of hydrogenated Amorphous silicon (a-Si:II) and a transition Metal (Mo, Ti) were prepared by alternating dual magnetron sputtering. In this study we investigate the electrical performance of multilayer films containing discontinuous metal sublayers separated by a-Si:H sublayers of 80 nm thickness. A voltage of typical 8 V applied to the coplanar electrodes switches the samples from a semiconducting to a metallic state. The switching effect, which is reversible by thermal annealing, is accompanied by chaotic current oscillations. The temperature dependence of the conductivity in the metallic state is described by Inσ α T−1/2. The asymmetric illumination of the interelectrode spacing in coplanar configuration resulted in a generation of a lateral photovoltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 461
Copyright
Copyright © Materials Research Society 1994

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References

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