Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-04T18:18:54.910Z Has data issue: false hasContentIssue false
  • English
  • Français

Synchrotron Photoemission Studies of the Structure of Thermally Grown Si3N4 ON Si(100)*

Published online by Cambridge University Press:  25 February 2011

C. H. F. Peden ,
J. W. Rogers JR. ,
K. B. Kidd ,
K. L. Tsang  and
N. D. Shinn
C. H. F. Peden
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185–5800
J. W. Rogers JR.
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185–5800
K. B. Kidd
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185–5800
K. L. Tsang
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185–5800
N. D. Shinn
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185–5800
Get access

Abstract

Synchrotron photoemission measurements of the Si(2p) and N(ls) levels have been made on Si3N4 thin films grown in-situ by high temperature reaction of Si(100) with NH3. The tunability of the excitation photons allowed the mean-free-path of the emitted photoelectrons to be varied, thereby providing the capability to determine not only the types of chemical species present, but their location within the film as well. The structure of these films consists of an outer monolayer (ML) of Si atoms on top of stoichiometric Si3N4. In addition, there are a smaller number (1/2 ML) of Si atoms with intermediate oxidation states at the Si3N4/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 521
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work, performed at Sandia National Laboratories, was supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789.

References

REFERENCES

1. Moslehi, M. M. and Saraswat, K. C., IEEE Trans. Elect. Devices, ED–32, 106 (1985).Google Scholar
2. (a) Nemetz, J. A. and Tressler, R. E., Solid State Technology, February 79 (1983). (b) J. A. Nemetz and R. E. Tressler, Solid State Technology, September 209 (1983). (c) S. P. Murarka, C. C. Chang, and A. C. Adams, J. Electrochem. Soc. 126, 996 (1979). (d) C.-Y. Wu, C.-W. King, M.-K. Lee, and C.-T. Chen, J. Electrochem. Soc. 129, 1559 (1982). (e) Y. Hayafuji and K. Kajiwara, J. Electrochem. Soc. 129, 2102 (1982). (f) C. Maillot, H. Roulet, and G. Dufour, J. Vac. Sci. Tech. B2, 316 (1984). (g) A. Glachant and D. Saidi, J. Vac. Sci. Tech. B1, 985 (1985). (h) A. Glachant, D. Saidi, and J. F. DeLord, Surf. Sci. 168, 672 (1986). (i) C. Maillot, H. Roulet, G. Dufour, F. Rochet, and S. Rigo, Appl. Surf. Sci. 26, 326 (1986), and references therein.Google Scholar
3. Rogers, J. W. Jr., Blair, D. S., and Peden, C. H. F., in Deposition and Growth: Limits for Microelectronics, edited by Rubloff, G. W. (American Institute of Physics, New York, 1988), American Vacuum Society Series 4, p. 133.Google Scholar
4. (a) Kubler, L., Bischoff, J. L., and Bolmont, D., Phys. Rev. B 38, 13113 (1988). (b) J. L. Bischoff, L. Kubler, and D. Bolmont, Surf. Sci. 209, 115 (1989).Google Scholar
5. (a) Karcher, R., Ley, L., and Johnson, R. L., Phys. Rev. B 30, 1896 (1984). (b) B. Dunnett, D. I. Jones, and A. D. Stewart, Phil. Mag. B 53, 159 (1986). (c) L. Kubler, R. Haug, E. K. Hlil, D. Bolmont, and G. Gewinner, J. Vac. Sci. Technol. A 4, 2323 (1986).Google Scholar
6. Himpsel, F.J., McFeeley, F.R., Taleb-Ibrahimi, A., Yarmoff, J.A. and Hollinger, G., Phys. Rev. B 38, 6084 (1988).Google Scholar
7. Peden, C. H. F., Rogers, J. W. Jr., Blair, D. S., and Nelson, G. C., in Chemical Perstoectives of Microelectronic Materials, edited by Gross, M. E., Jasinski, J. M. and Yates, J. T. Jr., (Materials Research Society, Pittsburgh, 1989), p. 215.Google Scholar
8. Peden, C. H. F., Rogers, J. W. Jr., Shinn, N. D., Kidd, K. B., and Tsang, K. L., in preparation.Google Scholar
9. Shirley, A. D., Phys. Rev. B 5, 4709 (1972).Google Scholar
10. Rich, D. H., Miller, T., and Chang, T.-C., Phys. Rev. B 37, 3124 (1988).Google Scholar
11. Mazur, A. and Pollmann, J., Surf. Sci. 225, 72 (1990).Google Scholar
12. Dresser, M. J., Taylor, P. A., Wallace, R. M., Choyke, W. J., and Yates, J. T. Jr., Surf. Sci. 218, 75 (1989), and references therein.Google Scholar
13. Dillon, A. C., Gupta, P., Robinson, M. B., Bracker, A. S., and George, S. M., J. Vac. Sci. Technol. A 2, in press (1991).Google Scholar
14. Rogers, J. W. Jr., Ph.D. thesis, University of Texas, Austin (1978).Google Scholar