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Synthesis, Characterization and Evaluation of Zinc-Amides as Potential Dopant Sources for ZnSe OMVPE

Published online by Cambridge University Press:  22 February 2011

William S. Rees Jr ,
David M. Green ,
Werner Hesse ,
Timothy J. Anderson  and
Balu Pathangey
William S. Rees Jr
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306–3006, U.S.A.
David M. Green
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306–3006, U.S.A.
Werner Hesse
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306–3006, U.S.A.
Timothy J. Anderson
Affiliation:
Department of Chemical Engineering and MICROFABRITECH, The University of Florida, Gainesville, Florida 32611–2022, U.S.A.
Balu Pathangey
Affiliation:
Department of Chemical Engineering and MICROFABRITECH, The University of Florida, Gainesville, Florida 32611–2022, U.S.A.
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Abstract

Compounds of the general forms Zn[N(R)2]2, Zn(N(R)(R')2] and Zn{[N(R)2][N(R')2]} have been prepared, these new compositions have been characterized by multinuclear NMR, GC/MS, FTIR, elemental analysis and single crystal x-ray diffraction, and they have been evaluated for their potentialto serve as “designer dopants” in the epitaxial growth of p-type ZnSe. Retention of the Zn-N bond during deposition should insure selective location of the nitrogen atom on the native selenium lattice site. Precursor vapor pressures, vapor phase decomposition mechanisms, and thin film properties are presented. Results from materials characterization by XRD, SIMS, PL, Raman and SEM are presented in the context of evaluating dopantlevel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 63
Copyright
Copyright © Materials Research Society 1993

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References

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