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Synthesis of Crystalline C3N4 films and the new C-N Phases

Published online by Cambridge University Press:  10 February 2011

Yan Chen ,
D. J. Johnson ,
R. H. Prince ,
Liping Guo  and
E. G. Wang
Yan Chen
Affiliation:
Department of Physics and Astronomy, York University, North York, Ontario, Canada M3J 1P3
D. J. Johnson
Affiliation:
Department of Physics and Astronomy, York University, North York, Ontario, Canada M3J 1P3
R. H. Prince
Affiliation:
Department of Physics and Astronomy, York University, North York, Ontario, Canada M3J 1P3
Liping Guo
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, P.O.Box 603, China
E. G. Wang
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, P.O.Box 603, China
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Abstract

Crystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 717
Copyright
Copyright © Materials Research Society 1997

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References

1. Cohen, M.L., Phys. Rev. B 32, 7988 (1985).Google Scholar
2. Liu, A.Y. and Cohen, M.L., Science 245, 841(1989); Phys. Rev. B41, 10727 (1990).Google Scholar
3. Liu, A.Y. and Wentzcovitch, R.M., Phys. Rev. B 50, 10362 (1994).Google Scholar
4. Teter, D.M. and Hemley, R.J., Science 271, 53(1996).Google Scholar
5. Torng, C.S., Sivertsen, J. M., Jundy, J.H. and Chang, C., J. Mater. Res. 5, 2490(1990).Google Scholar
6. Li, D., Chung, Y.-W. and Sproul, W.D., J. Appl. Phys. 74, 219(1993).Google Scholar
7. Yong, Y., Nelson, K.A. and Adibi, F., J. Mater.Res. 10, 41(1995).Google Scholar
8. Marton, D., Boyd, K.J., Al-Bayati, A.H., Todorov, S.S. and Rabalais, J.W., Phys. Rev. Lett. 73, 118(1994).Google Scholar
9. Liu, C., Lu, Y.Z. and Lieber, C.M., Science 261, 334(1993).Google Scholar
10. Yu, K.M., Cohen, M.L., Haller, E.E., Hanser, W.L., Liu, A.Y. and Wu, I.C., Phys. Rev. B 49, 5034 (1994).Google Scholar
11. Yen, T.Y. and Chou, C.P., Appl. Phys. Lett. 67, 2801(1995).Google Scholar
12. Sjostrom, H., Stafstrom, S., Boman, M., and Sundgren, J.E., Phys. Rev. Lett. 75,1336(1995).Google Scholar
13. Li, D., Chu, Z., Cheng, S.C., Liu, X.W., David, V.P. and Chung, Y.W., Appl. Phys. Lett. 67, 203 (1995).Google Scholar
14. Zhang, Y.F., Zhou, Z.H., and Li, H.L., Appl. Phys. Lett. 68, 634 (1996).Google Scholar
15. Chen, Y., Guo, L.P. and Wang, E. G., Modern Physics Lett 10, 57 (1996); Philosophy Mag. Lett. A (in print)Google Scholar