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Synthesis of Spatially Controlled Nanostructures by Ion Implantation in V-Grooves on (001) Si Surfaces

Published online by Cambridge University Press:  17 March 2011

Torsten Müller ,
Karl-Heinz Heinig ,
Bernd Schmidt ,
Arndt Mücklich  and
Wolfhard Möller
Torsten Müller
Affiliation:
Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung PO-BOX 510119, 01314 Dresden, Germany
Karl-Heinz Heinig
Affiliation:
Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung PO-BOX 510119, 01314 Dresden, Germany
Bernd Schmidt
Affiliation:
Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung PO-BOX 510119, 01314 Dresden, Germany
Arndt Mücklich
Affiliation:
Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung PO-BOX 510119, 01314 Dresden, Germany
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Abstract

The synthesis of spatially controlled Ge nanowires and nanoclusters by Ge+ ion implantation in oxidized V-grooves on (001) Si surfaces has been studied experimentally as well as theoretically. The V-grooves were prepared by anisotropic wet chemical etching and thermal oxidation. The SiO2-covered V-grooves were implanted with 70 keV Ge+ ions up to a fluence of 1017 cm−2. Ge accumulates within the SiO2 at the bottom of the V-groove, which has been proven by analytical TEM (EDX-mapping). Theoretical studies have shown that the Ge accumulation is caused by the V-groove geometry, forward sputtering, and re-deposition. During subsequent annealing the redistributed Ge forms a nanowire by precipitation, ripening and coalescence. Kinetic lattice Monte Carlo simulations of the nanowire formation process show growth instabilities and self-organization phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O10.2
Copyright
Copyright © Materials Research Society 2001

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