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Systematic study of methanol addition to enhance the film development of APCVD tin oxide

Published online by Cambridge University Press:  13 September 2011

Joop van Deelen ,
Ioanna Volintiru  and
Paul Poodt
Joop van Deelen*
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
Ioanna Volintiru
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
Paul Poodt
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
*
*corresponding author: joop.vandeelen@tno.nl
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Abstract

Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor. By adding methanol during the deposition process ten times more conductive SnO2 films are obtained, with remarkably high mobility values of up to 55 cm2/Vs. The investigations on the morphological and structural properties indicate that the main effect of methanol is the densification of the SnO2 films, which probably causes the improvement in the electrical properties. In all conditions the nucleation and coalescence phases take place very early in the growth. The films are already very conductive at a thickness below 10 nm, which is very beneficial to applications that have strict requirements in terms of film transparency. This high conductivity was attributed to a high carrier concentration, obtained without intentional doping.

Keywords

chemical vapor deposition (CVD) (deposition)crystal growthphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1323: Symposium C – Advanced Materials Processing for Scalable Solar-Cell Manufacturing , 2011 , mrss11-1323-c03-31
Copyright
Copyright © Materials Research Society 2011

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References

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