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Ta-Si-N and Si3N4 Encapsulants for InP

Published online by Cambridge University Press:  25 February 2011

J. S. Reid ,
R. P. Ruiz ,
E. Kolawa ,
J. S. Chen ,
J. Madok  and
M -A. Nicolet
J. S. Reid
Affiliation:
California Institute of Technology, Pasadena, CA 91125
R. P. Ruiz
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125
J. S. Chen
Affiliation:
California Institute of Technology, Pasadena, CA 91125
J. Madok
Affiliation:
University of California, Los Angeles, CA 90024
M -A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Thin films of sputtered, amorphous Ta36Si14N50 (a metallic conductor) and Si3N4 (an insulator) were evaluated as encapsulants for (100)-oriented InP substrates. Thicknesses of both films were approximately 100 nm. During a 15 min annealing in Ar, liberated phosphorus was gettered by a <Si>ISiO2ITa(100 nm) collector placed face-to-face on encapsulated or non-encapsulated InP. The stability of the InP with the encapsulant was characterized by backscattering spectrometry, scanning electron microscopy, and x-ray diffraction. As measured by 4He++ backscattering spectrometry, detectable amounts of phosphorus do not arise in the Ta collectors for the Ta-Si-N and Si3N4 encapsulation schemes until 650 and 700°C, respectively. Failure of the Ta36Si14N50 film is catastrophic at 700°C whereas the Si3N4 film degrades locally commencing at 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 555
Copyright
Copyright © Materials Research Society 1992

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