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TEM Analyses Of Cu-Ta And Cu-Tan Interfaces

Published online by Cambridge University Press:  10 February 2011

J. Y. Phillip Wang ,
Hong Zhang ,
Imran Hashim ,
Girish Dixit  and
Fusen Chen
J. Y. Phillip Wang
Affiliation:
Metal Deposition, Applied Materials, Santa Clara, CA 95054
Hong Zhang
Affiliation:
Metal Deposition, Applied Materials, Santa Clara, CA 95054
Imran Hashim
Affiliation:
Metal Deposition, Applied Materials, Santa Clara, CA 95054
Girish Dixit
Affiliation:
Metal Deposition, Applied Materials, Santa Clara, CA 95054
Fusen Chen
Affiliation:
Metal Deposition, Applied Materials, Santa Clara, CA 95054
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Abstract

This paper reports an extensive interfacial study of Cu deposited on Ta and TaN barrier layers. It has been reported that the Cu/Ta interface develops a uniform and thin amorphous layer at the interface upon thermal treatment[l]. However, our high resolution transmission electron microscopy (HRTEM) analysis shows atomically sharp interfaces for all conditions without any amorphous layer at the interfaces, especially for the ones which underwent one hour annealing at 400°C and 500°C. The “amorphization” effect is only observed if the Cu/Ta TEM specimen is exposed to oxygen. It exists usually at the thinner regions of the TEM specimen or if the specimen is left in air for > 24 hours. Energy dispersion x-ray (EDX) analysis of the “amorphized” region shows that it is a mixture of Cu, Ta, and O.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 293
Copyright
Copyright © Materials Research Society 1999

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