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TEM and HREM Investigation of The Precipitation of Cobalt and Nickel In Polycrystalline Silicon

Published online by Cambridge University Press:  25 February 2011

H. J. Möller ,
Juyong Chung  and
Lan Huang
H. J. Möller
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
Juyong Chung
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
Lan Huang
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
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Abstract

The precipitation behavior of cobalt and nickel at grain boundaries in multicrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 -1000 °C and the precipitation after cooling is studied by conventional and high resolution TEM. Cobalt and nickel disilicide precipitates nucleate both in the bulk and at grain boundaries. They form few large (micrometer size) plate-like or three-dimensional precipitates depending on the cooling rate. Cobalt disilicide with a slightly larger lattice mismatch has a higher tendency to nucleate at large angle grain boundaries. Both suicides nucleate preferentially at coherent twin boundaries forming a few atomic layers thick platelet parallel to the {111} twin plane. HREM and image simulations are performed to analyze the Si / MS12 / twin interface structure (M = Co, Ni).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 451
Copyright
Copyright © Materials Research Society 1992

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References

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