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Tem Investigation of Hydrogen Implanted and Laser Annealed Silicon

Published online by Cambridge University Press:  16 February 2011

P. Zheng ,
R.G. Saint-Jacques ,
B. Terreault  and
G. Veilleux
P. Zheng
Affiliation:
INRS-Énergie et Matériaux, Université du Québec, Varennes, Qc, Canada, J3X 1S2
R.G. Saint-Jacques
Affiliation:
INRS-Énergie et Matériaux, Université du Québec, Varennes, Qc, Canada, J3X 1S2
B. Terreault
Affiliation:
INRS-Énergie et Matériaux, Université du Québec, Varennes, Qc, Canada, J3X 1S2
G. Veilleux
Affiliation:
INRS-Énergie et Matériaux, Université du Québec, Varennes, Qc, Canada, J3X 1S2
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Abstract

In order to explain the relatively easy laser-induced desorption of hydrogen implanted in silicon, and particularly the lower temperature needed for desorption at higher implantation energy, the microstructural modifications produced by laser pulses were studied by means of transmission electron microscopy. The structural damage, such as defect clusters and hydrogen gas bubbles was observed. In the case of low dose implantation (H/Si ≤ 15&), most of the bubbles were produced during laser annealing rather than during implantation. This bubble formation in the course of desorption explains the higher temperature needed. When blisters are already present on the as-implanted surface, desorption starts at a lower temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 493
Copyright
Copyright © Materials Research Society 1995

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References

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