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Temperature And Dose Dependence of An Amorphous Layer Formed By Ion Implantation

Published online by Cambridge University Press:  26 February 2011

Eliezer Dovid Richmond  and
Alvin R. Knudson
Eliezer Dovid Richmond
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C.
Alvin R. Knudson
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C.
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Abstract

A model is formulated to predict the width of an amorphous layer in Si produced by ion implantation. The dependency of the amorphous Si layer width on the ion implantation energy, dose, and temperature is computed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 375
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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