Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-24T05:27:55.936Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Published online by Cambridge University Press:  01 February 2011

Shaoyun Huang ,
Souri Banerjee  and
Shunri Oda
Shaoyun Huang
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152-8552, JAPAN
Souri Banerjee
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152-8552, JAPAN
Shunri Oda
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152-8552, JAPAN
Get access

Abstract

Temperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structures have been studied. A clear positive shift in capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics suggests electron trapping in nc-Si dots. The role of interface states and deep traps in these devices has also been examined, which shows that they have little effect on the overall device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A12.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Huang, S., Banerjee, S., and Oda, S.. Mater. Res. Soc. Symp. Proc. 664, A8.8 1 (2002).Google Scholar
2. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbé, E., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996).Google Scholar
3. Guo, L. J., Leobandung, E., and Chou, S. Y., Science 275 649 (1997).Google Scholar
4. Kohno, A., Murakami, H., Ikeda, M., Miyazaki, S., and Hirose, M.: Ext. Abstr. 1998 Int. Conf. Solid State Devices & Materials, Hiroshima, p.174 (1998).Google Scholar
5. Shi, Y., Saito, K., Ishikuro, H., and Hiramoto, T., J. Appl. Phys. 84, 2358 (1998).Google Scholar
6. Hinds, B. J., Yamanaka, T., and Oda, S., J. Appl. Phys. 90, 6402 (2001).Google Scholar
7. Beenakker, C. W., Phys. Rew. B, 44, 1646 (1991).Google Scholar
8. Nicollian, E. H. and Brews, J. R., MOS Physics and Technology (Wiley, New York, 1982).Google Scholar
9. Biswas, N., Harris, H. R., Wang, X., Celebi, G., Temkin, H. and Gangopadhyay, S., J. Appl. Phys. 89, 4417 (2001).Google Scholar
10. Harris, H., Biswas, N., Temkin, H. and Gangopadhyay, S., J. Appl. Phys. 90, 5825 (2001).Google Scholar
11. Sze, S. M., Physics of Semiconductor Devices, 2nd Edition (Wiley, New York, 1981).Google Scholar