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Temperature Dependence of Ion Beam Mixing in Al

Published online by Cambridge University Press:  15 February 2011

S.T. Picraux ,
D. M. Follstaedt  and
J. Delafond
S.T. Picraux
Affiliation:
Sandia National Laboratories,† Albuquerque, NM 87185
D. M. Follstaedt
Affiliation:
Sandia National Laboratories,† Albuquerque, NM 87185
J. Delafond
Affiliation:
Sandia National Laboratories,† Albuquerque, NM 87185
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Abstract

The atomic mixing of evaporated Al/Sb films and of Al/Ag films on Al<110> crystal substrates by 400 keV Xe ion beams has been investigated. Concentration depth profiles were measured in situ by 1.5 MeV He scattering as a function of Xe fluence from 2 to 32×1015 Xe/cm2. The initial mixing rates are similar at 85 and 300 K; mixing proceeds by rapid motion of Al (≈15 Al/Xe) into and uniformly through the thickness of the Sb film and by a slow motion of Sb (≈0.5 Sb/Xe) into the Al<110> substrate. More rapid Sb mixing into Al occurs for polycrystalline Al. The rate for Al into Sb slows at concentrations approaching the stable AlSb phase. Appreciably higher rates of Sb mixing into Al (2.2 to 2.8 Sb/Xe) occur at 575 K. Mixing rates for the highly soluble system, Al/Ag, are compared to the nearly insoluble Al/Sb at 85 and 300 K. Appreciably higher rates are found for Ag than for Sb, suggesting the influence of chemical driving forces even at these low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 71
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under Contract number DE-AC04-76DP00789.

†

A U.S. Department of Energy Facility.

**

Present address: Poitiers University, Poitiers, France

References

REFERENCES

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