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Temperature Dependence of Metal-Semiconductor Contacts on 6H-SiC.

Published online by Cambridge University Press:  26 February 2011

S.R. Smith ,
A.O. Evwaraye  and
W.C. Mitchel
S.R. Smith
Affiliation:
Wright Laboratory, WL/MLPO, 3005 P St., Wright-Patterson AFB, OH 45433-7707
A.O. Evwaraye
Affiliation:
Wright Laboratory, WL/MLPO, 3005 P St., Wright-Patterson AFB, OH 45433-7707
W.C. Mitchel
Affiliation:
Wright Laboratory, WL/MLPO, 3005 P St., Wright-Patterson AFB, OH 45433-7707
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Abstract

We have examined the temperature dependence of the barrier height of Au, Ag, Ni, and Al, metal-semiconductor contacts on n-type 6H-SiC, and Al metal-semiconductor contacts on p-type 6H-SiC. The barrier height was determined from the (1/C2) vs VR characteristics of the contacts at temperatures ranging from 300K to 670K. The measurements were made at 1 MHz. These measurements were compared to I-V measurements at various temperatures, and to the behavior predicted by standard models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 835
Copyright
Copyright © Materials Research Society 1995

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