Hostname: page-component-7479d7b7d-q6k6v Total loading time: 0 Render date: 2024-07-09T09:24:22.742Z Has data issue: false hasContentIssue false
  • English
  • Français

A Test of Two Solute-Trapping Models*

Published online by Cambridge University Press:  25 February 2011

M. J. Aziz ,
J. Y. Tsao ,
M. O. Thompson ,
P. S. Peercy ,
C. W. White  and
W. H. Christie
M. J. Aziz
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831.
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
M. O. Thompson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853.
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831.
W. H. Christie
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853.
Get access

Abstract

Two solute trapping models are compared. They are shown to predict identical behavior at any given end of a phase diagram but different behavior as the phase diagram is traversed. The segregation behavior of dilute solutions of Ge in Si (ke < 1) and of Si in Ge (ke > 1) during regrowth from pulsed-laser melting is being studied using transient conductance, high resolution RBS, and SIMS. Our results to date suggest a significant amount" of solute trapping (k —> 1) of Ge in Si and of Si in Ge. Such a result would be inconsistent with the predictions of one of the models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 153
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

[1] Hall, R.N., J. Phys. Chem. 57, 836 (1953).Google Scholar
[2] Chernov, A.A., in Growth of Crystals, Vol. 3, eds.Shubnikov, A.V. and Sheftal, N.N.'. Consultants Bureau, New York, 1962.Google Scholar
[3] Brice, J.C., The Growth of Crystals From the Melt, North-Holland, Amsterdam, 1965.Google Scholar
[4] Cahn, J.W., Coriell, S.R., and Boettinger, W.J., in Laser and Electron Beam Processing of Materials, eds. White, C.W. and Peercy, P.S., Academic Press, New York, 1980. pp. 89–103.Google Scholar
[5] Hillert, M. and Sundman, B., Acta Metall. 25, 11 (1977).Google Scholar
[6] Jackson, K.A., Gilmer, G.H., and Leamy, H.J., in Laser and Electron Beam Processing of Materials, eds. White, C.W. and Peercy, P.S., Academic Press, New York, 1980. pp. 104–110.Google Scholar
[7] Wood, R.F., Appl. Phys. Lett. 37, 302 (1980).Google Scholar
[8] Aziz, M.J., J. Appl. Phys. 53, 1158 (1982).Google Scholar
[9] Gilmer, G.H., Mat. Res. Soc. Symp. Proc. 13, 249 (1983).Google Scholar
[10] Baker, J.C. and Cahn, J.W., in Solidification, ASM, Metals Park, Ohio, 1970. pp. 23–58.Google Scholar
[11] Jackson, K.A., in Surface Modification and Alloying By Laser, Ion and Electron Beams, eds. Poate, J.M., Foti, G., and Jacobson, D.C.. Plenum, Press, New York, 1983. p. 51.Google Scholar
[12] Aziz, M.J., Appl. Phys. Lett. 43, 552 (1983).Google Scholar
[13] Thompson, M.O., Mayer, J.W., Cullis, A.G., Webber, H.C., Chew, N.G., Poate, J.M., and Jacobson, D.C., Phys. Rev. Lett. 50, 896 (1983).Google Scholar
[14] Hansen, M., Constitution of Binary Alloys, 2d. ed., McGraw-Hill, New York, 1958. p. 774.Google Scholar
[15] Thurmond, C.D., J. Phys. Chem. 57, 827 (1953).Google Scholar