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Theoretical and Experimental Studies on Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor and Metal-Insulator -Ferroelectric-Insulator-Semiconductor Structures

Published online by Cambridge University Press:  21 March 2011

Masanori Okuyama ,
Mitsue Takahashi ,
Kazushi Kodama ,
Toshiyuki Nakaiso  and
Minoru Noda
Masanori Okuyama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Japan
Mitsue Takahashi
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Japan
Kazushi Kodama
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Japan
Toshiyuki Nakaiso
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Japan
Minoru Noda
Affiliation:
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Japan
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Abstract

Retention characteristics of Metal-Ferroelectric-Insulator-Semiconductor(MFIS) and Metal-Insulator-Ferroelectric-Insulator-Semiconductor(M-I-FIS) structures have been investigated both theoretically and experimentally. The simulated time dependence of capacitance for the MFIS has indicated that reducing currents through the ferroelectric and the insulator layers improves the retention characteristics more effectively than choosing the insulators with larger dielectric constants. The M-I-FIS structure has been studied in order to reduce the charge injection between the metal and the ferroelectric layer in the MFIS. The simulations have indicated that the M-I-FIS can provide much longer retention time than the original MFIS, although the experimental retention time of the M-I-FIS have almost the same as that of the MFIS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC13.10.1
Copyright
Copyright © Materials Research Society 2001

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