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Thermal Behaviour of Implanted Nitrogen and Accumulated Hydrogen in Titanium

Published online by Cambridge University Press:  10 February 2011

M. Soltani-Farshi
Affiliation:
Institute of Nuclear Physics, University of Frankfurt, August-Euler-Str. 6, 60486 Frankfurt, Germany
H. Baumann
Affiliation:
Institute of Nuclear Physics, University of Frankfurt, August-Euler-Str. 6, 60486 Frankfurt, Germany
D. Rück
Affiliation:
Center for Heavy Ion Research, Planckstr. 1, 64291 Darmstadt, Germany
G. Walter
Affiliation:
Institute of Nuclear Physics, University of Technology, SchloBgartenstr. 9, 64289 Darmstadt, Germany
K. Bethge
Affiliation:
Institute of Nuclear Physics, University of Frankfurt, August-Euler-Str. 6, 60486 Frankfurt, Germany
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Abstract

The influence of nitrogen ion implantation on the hydrogen accumulation in titanium was investigated as function of sample temperature and ion fluence. 150 keV nitrogen (15N) ions were implanted at different sample temperatures up to 700°C with fluences ranging from 1 × 1017 to 1 × 1018 ions/cm2. The amount of accumulated hydrogen and its depth distribution was measured quantitatively with the 15N depth profiling method. The implanted 15N depth profiles were measured by the reverse reaction 15N(p, αγ)12C at 429 keV. The binary phases of the implanted nitrogen with titanium are detected by grazing incidence x-ray diffraction. The results are compared with those obtained for samples implanted at RT and subsequently thermally treated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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