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Thermal characterization and modeling of intermediate phase formation in 20/80 nm and 10/20 nm Cu/Mg multilayers

Published online by Cambridge University Press:  11 February 2011

M. González-Silveira ,
J. Rodríguez-Viejo  and
M.T. Clavaguera-Mora
M. González-Silveira
Affiliation:
Grup de Física de Materials I, Physics Department, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain.
J. Rodríguez-Viejo
Affiliation:
Grup de Física de Materials I, Physics Department, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain.
M.T. Clavaguera-Mora
Affiliation:
Grup de Física de Materials I, Physics Department, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain.
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Abstract

The kinetics of intermediate phase formation in the Cu/Mg multilayer system is analyzed using Differential Scanning Calorimetry. Three main exothermic processes are found during the continuous DSC treatments. The first two, significantly overlapped, are related to the same process, nucleation and growth of the Mg2Cu along the interface. We interpret differences between the Mg/Cu and Cu/Mg interfaces are at the origin of this unexpected behavior. The third exothermic reaction is due to the growth of the Mg2Cu phase perpendicular to the original interface. A kinetic model is developed which yields calorimetric traces in good agreement with the experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W19.4
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Cotts, E.J., Merg, W.JH., Johnson, W.L., Phys. Rev. Lett. 57, 2295 (1986).Google Scholar
2. Michaelsen, C., Barmak, K., Weihs, T.P., J. Phys. D: Appl. Phys. 30, 3167 (1997).Google Scholar
3. Arcot, B., Murarka, S.P., Clevenguer, L.A., Hong, Q.Z., Ziegler, W. and Harper, J.M., J. Appl. Phys. 76, 5161 (1994).Google Scholar
4. Zhong, Q.Z. and d'Heurle, F.M., J. Appl. Phys. 72, 4036 (1992).Google Scholar
5. Rodríguez-Viejo, J., Gonzalez-Silveira, M. and Clavaguera-Mora, M.T., J. Appl. Phys. (in press).Google Scholar
6. Coffey, K.R., Clevenger, L.A., Barmak, K., Rudman, D.A. and Thompson, C.V., Appl. Phys. Lett. 55, 852 (1989).Google Scholar
7. Ma, E., Thompson, C.V. and Clevenger, L.A., J. Appl. Phys. 69, 2211 (1991).Google Scholar
8. Avrami, M., J. Chem. Phys. 7, 1103 (1939).Google Scholar