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Thermal Stability of a1-pt Thin Films/Gaas for Self-Aligning Gate Contacts
Published online by Cambridge University Press: 25 February 2011
Abstract
Several compositions of Al-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The Al concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs self-aligning gate technology for compositions between AlPt and Al2Pt.
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