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A Thermally Stable Silicon Rich Amorphous Silicon Nitride Alloy for Electronic Device Applications

Published online by Cambridge University Press:  21 February 2011

Joseph B. Bernstein ,
Edward F. Gleason  and
Peter W. Wyatt
Joseph B. Bernstein
Affiliation:
MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02173
Edward F. Gleason
Affiliation:
MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02173
Peter W. Wyatt
Affiliation:
MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02173
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Abstract

We have developed an alloy of silicon rich amorphous silicon nitride as a linkable interlevel metal dielectric. This material is thermally stable through a heat treatment of 425°C for 30 minutes. The hydrogen content remains at approximately 21 at.%, even after this heat treatment. The breakdown potential is 1.9 × 106 V/cm at which point a metallic filament link forms between the metal contacts. The index of refraction is 2.43 and the HF permittivity is 9 Co- One important property is its ability to store polarized charge like an electret. This feature could allow it to be used in memory applications like MNOS. The alloy is also photoconductive with a response time of less than 5 μs, allowing it to be used as part of an optically sensitive circuit element.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 667
Copyright
Copyright © Materials Research Society 1992

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References

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