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Thermodynamics of Hole and Hillock Growth in Thin Films

Published online by Cambridge University Press:  15 February 2011

D. J. Srolovitz ,
W. Yang  and
M. G. Goldiner
D. J. Srolovitz
Affiliation:
Department of Materials Science and Eng., University of Michigan, Ann Arbor. MI 48104, srol@umich.edu
W. Yang
Affiliation:
Department of Materials Science and Eng., University of Michigan, Ann Arbor. MI 48104, srol@umich.edu
M. G. Goldiner
Affiliation:
Department of Materials Science and Eng., University of Michigan, Ann Arbor. MI 48104, srol@umich.edu
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Abstract

This paper provides a thermodynamic analysis of hole and hillock growth in stressed thin films in simplified geometries. Two limiting cases were considered. In the first, matter is transported to (from) the growing hillock (hole) from (to) the surface of the film. In the second case, the material transported to (from) the growing hillock (hole) comes from (goes to) the interior of the film in the vicinity of the hillock (hole). When bulk relaxation is dominant, hillock growth is favored by a compressive stress in the film and hole growth is enhanced when the film is in tension. This is the commonly observed situation. On the other hand, when surface relaxation effects dominate, hillocks and holes can grow in either tension or compression.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 3
Copyright
Copyright © Materials Research Society 1996

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