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Thermoelectric Properties of P-Type (Bi1−xSbx)2Te3 Fabricated by Mechanical Alloying Process

Published online by Cambridge University Press:  15 February 2011

Boo Yang Jung
Affiliation:
Depart. of Metall. and Mater. Sci., Hong Ik Univ., Seoul, Korea, ohts@wow.hongik.ac.kr
Jae Shik Choi
Affiliation:
Depart. of Metall. and Mater. Sci., Hong Ik Univ., Seoul, Korea, ohts@wow.hongik.ac.kr
Tae Sung Oh
Affiliation:
Depart. of Metall. and Mater. Sci., Hong Ik Univ., Seoul, Korea, ohts@wow.hongik.ac.kr
Dow-Bin Hyun
Affiliation:
Metals Division, Korea Institute of Science and Technology, Seoul 136–791, Korea
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Abstract

Thermoelectric properties of polycrystalline (Bi1−xSbx)2Te3 (0.75 ≤ x ≤ 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi0.25Sb0.75)2Te3 alloy powder was completed by mechanical alloying for 5 hours at ball- to-material ratio of 5: 1, and processing time for (Bi1−xSbx)2Te3 formation increased with Sb2Te3 content x. When (Bi0.25Sb0.75)2Te3 was hot pressed at temperatures ranging from 300°C to 550°C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 × 10−3/K could be obtained by hot pressing at 550°C. When hot pressed at 550°C, (Bi0.2Sb0.8)2Te3 exhibited figure-of-merit of 2.92 × 10−3/K, which could be improved to 2.97 × 10−3/K with addition of 1 wt% Sb as acceptor dopant.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Rowe, D. M., CRC Handbook of Thermoelectrics, CRC Press, Inc., Bona Raton (1995).Google Scholar
2. Yim, W. M. and Rosi, F. D., J Solid State Electronics, 15, 1121 (1972).Google Scholar
3. Ohsugi, I. J., Kojima, T. and Nishida, I. A., J. Appl. Phys., 68, 5692 (1990).Google Scholar
4. Hasezaki, K., Nishimura, M., Umata, M., Tsukuda, H. and Araoka, M., Proc. 12th ICT, 307 (1993).Google Scholar
5. Cook, B. A., Beaudry, B. J., Harringa, J. L. and Barnett, W. J., Proc. 9th ICT, 234 (1990).Google Scholar
6. Rowe, D. M., Shukla, V. S. and Savvides, N., Nature, 290, 765 (1981).Google Scholar
7. Yanagitani, A., Nishikawa, S., Kawai, Y., Hayashimoto, S., Itoh, N. and Kataoka, T., Proc 12th ICT (1993) 281 Google Scholar
8. Harman, T. C., Cahn, J. H. and Logan, M. J., J. AppL Phys., 30, 9 (1959).Google Scholar
9. Abrikosov, N. Kh., Bankina, V. F., Poretskaya, L. V., Shelimova, L. E. and Skudnova, E. V., Semiconducting II-VI, IV-VI, and V-VI Compounds, Plenum Press, New York (1969).Google Scholar
10. Barin, I., Thermochernical Data of Pure Substances, VCH, New York (1989).Google Scholar
11. Miller, G. R. and Li, C. Y., J Phys. Chem. Solids, 26, 173 (1965).Google Scholar
12. Horak, J., Cermak, K. and Koudelka, L., J. Phys. Cherm. Solid, 47, 805 (1986).Google Scholar
13. Ha, H. P., Cho, Y. W., Byun, J. Y. and Shim, J. D., Proc 12th ICE, 105 (1993).Google Scholar
14. Jaklovszky, J., Ionescu, R., Nistor, N. and Chiculita, A., Phys, Status Solidi(A), 27, 329 (1975).Google Scholar