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Thermoelectric Properties of TiS2 type materials

Published online by Cambridge University Press:  01 February 2011

Edward E. Abbott ,
Joseph W. Kolis ,
Nathan D. Lowhorn ,
William Sams  and
Terry M Tritt
Edward E. Abbott
Affiliation:
Department of Chemistry, Clemson University, Clemson SC 29634
Joseph W. Kolis
Affiliation:
Department of Chemistry, Clemson University, Clemson SC 29634
Nathan D. Lowhorn
Affiliation:
Department of Physics, Clemson University, Clemson SC 29634
William Sams
Affiliation:
Department of Physics, Clemson University, Clemson SC 29634
Terry M Tritt
Affiliation:
Department of Physics, Clemson University, Clemson SC 29634
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Abstract

TiS2 belongs to a family of layered compounds that displays promise as a thermoelectric material. At room temperature the thermopower (a) of TiS2 displays an n-type behavior, with a magnitude of ≈ -200 μV/K. The electrical resistivity (ρ), is on the order of 1 mΩ-cm at room temperature and displays a “metallic-like” behavior with dR/dT > 0 from 300 K to 10 K. Thus, these compounds exhibit relatively large power factors (PF = α2/ρ) with a PF ∼30 μW/K2 cm at T = 300 K, which are comparable to the state-of-the art Bi2Te3 type materials, which have a PF ∼40 μW/K2, at T = 330K. These values suggest that further investigations of these systems could be profitable. Thin plate-like crystals of TiS2 are grown by the iodine vapor transport method with planar dimensions of 1 cm and thicknesses of 20 μm or more. In this synthetic approach some dopants can be integrated into the parent compound, effectively providing a route for the tuning of electronic properties. We present here some effects of elemental doping on the electronic properties in these TiS2 based materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S8.30
Copyright
Copyright © Materials Research Society 2004

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