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Thermo-Mechanical Simulation Of A Multichip Press-Packed Igbt

Published online by Cambridge University Press:  10 February 2011

A. Pirondi ,
G. Nicoletto ,
P. Cova ,
M. Pasqualetti ,
M. Portesine  and
P. E. Zani
A. Pirondi
Affiliation:
University of Parma, Viale delle Scienze, 43100 Parma – Italy
G. Nicoletto
Affiliation:
University of Parma, Viale delle Scienze, 43100 Parma – Italy
P. Cova
Affiliation:
University of Parma, Viale delle Scienze, 43100 Parma – Italy
M. Pasqualetti
Affiliation:
Ansaldo Trasporti – Semiconductors Unit, Via N. Lorenzi, 8, 16152 Genova – Italy
M. Portesine
Affiliation:
Ansaldo Trasporti – Semiconductors Unit, Via N. Lorenzi, 8, 16152 Genova – Italy
P. E. Zani
Affiliation:
Ansaldo Trasporti – Semiconductors Unit, Via N. Lorenzi, 8, 16152 Genova – Italy
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Abstract

The reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory contact conditions applied at assembly stage and mantained throughout the service life. The objective of this work is the simulation of the thermo-structural behavior of a multichip IGBT during initial assembly and subsequent uniform thermal cycling using the Finite Element method. A detailed axisymmetric FE model of the 3D-device is developed to assess multi-zone contact conditions. Elastic-plastic material behavior and Coulombian friction on contact surfaces are prescribed. The role of dimensional tolerances on contact conditions is discussed. The thermal cycling associated to accelerated testing is then introduced to determine the contact pressure evolution as well as local stick/slip conditions. The device sensitivity to potential damage initiation due to thermo-mechanical fatigue and/or fretting is addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 39
Copyright
Copyright © Materials Research Society 1998

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