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Thick Surface Barrier Detectors Made of Ultra-High Purity P-Type Si Single Crystal

Published online by Cambridge University Press:  15 February 2011

F. Shiraishi
Affiliation:
Rikkyo University, Nagasaka, Yokosuka, Kanagawa, 240–01
Y. Takami
Affiliation:
Rikkyo University, Nagasaka, Yokosuka, Kanagawa, 240–01
M. Hosoe
Affiliation:
Rikkyo University, Nagasaka, Yokosuka, Kanagawa, 240–01
Y. Ohsawa
Affiliation:
Komatsu Electric Metals Co., Shinomiya, Hiratsuka, Kanagawa, Japan.
H. Sato
Affiliation:
Komatsu Electric Metals Co., Shinomiya, Hiratsuka, Kanagawa, Japan.
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Abstract

The detector material used in this experimments is Ultra-High Purity p-type Si crystal. The material was single-crystalized through floating zone process from poly-crystal grown by thermal decomposition of highly refined mono-silane gas which had been purified by molecular sieves of specially prepared Zeolite powder.

The resisitivity at room temperature is normally above 30 kΩ.cm, and the value of the highest grade ones exceeds 100kΩ.cm which corresponds to the Boron concentration of 1.5×l011 B/cm3.

The potentiality of this material for detector use was investigated through Surface Barrier Detector fabrication. Detectors of above 4 mm thick and of excellent characteristics both at room temperature and at liq. N2 temperature could readily be fabricated. Owing to tie extremely high resisitivity, detectors can be made either partially depleted or totally depleted simply by properly selecting the wafer resisitivity and the thickness.

In detector fabrication, the proper surface chemical treatment is very important, and seriously affects the leakage current and breakdown characteristics.

Ultra-High Purity Si is promising as new detector material and has good potentiality to replace Si(Li) as followings:

1) simple and easy detector fabrication,

2) potentiality of thick detector fabrication (∼1cm),

3) no precipitation problem of Li ions, and

4) feasibility of thick ⊿E detector with thin entrance window on both faces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

(1) Yusa, A., Yatsurugi, Y. and Takaishi, T.; J. Electrochem. Soc. 122, 1700 (1975)CrossRefGoogle Scholar
(2) Itoh, D., Namba, I. and Yatsurugi, Y.; in this symposiumGoogle Scholar
(3) Tajima, M.; Appl. Phys. Lett. 32 (11), 1, June (1978)CrossRefGoogle Scholar
(4) Mathew, P.J., Chapman, N.G. and Coote, G.E.; Nucl. Instr. and Methods, 49, 245 (1967)CrossRefGoogle Scholar
(5) Maksimov, Yu. S., Rodinov, Yu. F., and Yavlinski, Yu. N.; Soviet Phys. Semiconductors, 1,No. 7, 867 (1968)Google Scholar
(6) Chaudhry, R. and Srikantiah, R.V.; B.A.R.C.–527 (1971)CrossRefGoogle Scholar
(1) Protsenko, A.V., Sinitsyn, V.N., Panasenko, N.V., and Korol, V.M.;Soviet Phys,- Semiconductors, 3, No. 9, 1118 (1970)Google Scholar
(8) Elad, E., Inskeep, C.N., Sareen, R.A. and Nestor, P.; IEEE NS– 20, No.1, 534, (1973)Google Scholar
(9) Kushniruk, V.F., Nikitina, R.A. and Kharitonov, Yu. P.; Soviet Phys.- Semiconductors 7, No.7, 933 (1974)Google Scholar
(10) Avdeichikov, V.V., Ganza, E.A. and Prikhodtseva, V.P.; Nucl. Instr. and Methods 133, 579 (1976)CrossRefGoogle Scholar
(11) Takami, Y., Shiraishi, F. and Hosoe, M.; to be published in IEEE NS–30, No. 1 Google Scholar
(12) Shiraishi, F., Hosoe, M., Takami, Y. and Ohsawa, Y. ; IEEE NS–29,No.1, 775(1982)Google Scholar
(13) Takami, Y., Hosoe, M. and Shiraishi, F.; to be published.Google Scholar
(14) Shiraishi, F. and Takami, Y.; Nucle. Instr. and Methods 196, 137 (1982)CrossRefGoogle Scholar
(15) Yabe, M., Sato, N., Kamijo, H., Takechi, T. and Shiraishi, F.; Nucl. Instr. and Methods 193, 63 (1982)CrossRefGoogle Scholar
(16) Kim, C., Kraner, H.W., Itoh, D., Husimi, K., Ohkawa, S., and Shiraishi, F.; Nucl. Instr. and Methods, 196, 143 (1982)CrossRefGoogle Scholar